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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

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Shanghai GaNova Electronic Information Co., Ltd.

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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, ...

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ISO GaN Substrates

gan semiconductor wafer

Fe Doped GaN Substrates

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